en
Huasun HJT solar cell was made of ultra-thin N-type silicon wafer which employs SMBB and μc-Si technology. The maximum efficiency has reached 25.61% in mass prodution, and there is a clear path of efficiency improvement with huge potential.
Thickness: 140土14μm
Max. Power of Single Piece: 6.77W
Max. Efficiency: 24.7%
Thickness: 130土20μm
Max. Power of Single Piece: 5.56W
Max. Efficiency: 25.2%
Thickness: 130土20μm
Max. Power of Single Piece:5.65W
Max. Efficiency: 25.6%
Thickness: 130土13μm
Max. Power of Single Piece:4.21W
Max. Efficiency: 25.2%
HJT cell uses α-Si thin-film as passivation materials to reduce the loss caused by the migration, which increases the open circuit voltage to 750mV.
Up to 95% bifaciality faciliates more sunlight to be captured and converted into power on the backside.
The temperature coefficient of Huasun HJT himalaya cell is -0.26%/℃, which ensures more power output in high temperature environment.
Minimize the path of flowing current and lower resistance-related power losses, further improving cell efficiency.
Know more about HJT or how to become Huasun's partner.
English
