HJT solar modules are solar modules that are manufactured using different types of semiconductor materials. Such modules are usually constructed from two different types of semiconductors, namely p-type and n-type semiconductors. This construction allows electrons to flow between the p-type and n-type semiconductors, thus creating an electric potential difference.
Different heterojunction solar modules can use different semiconductor materials, such as indium gallium germanium (InGaP), indium gallium arsenic (InGaAs) and indium copper arsenic (InCuAs). These materials have different spectral properties, which have an impact on the absorption and conversion efficiency of sunlight.
HJT solar module is typically more efficient than single semiconductor solar panels and therefore have great potential for future solar power generation.
HJT solar modules have higher stability and therefore can better adapt to environmental changes and aging effects.
HJT solar modules have higher reliability and therefore can better guarantee the operation of solar power systems.
HJT technology is highly scalable, allowing for the continuous development of new semiconductor materials and new construction methods, thereby improving the efficiency and reliability of solar electricity.
HJT solar modules are a solar power technology with great potential. It has the advantages of increased efficiency, stability and reliability, and is an important direction for future sustainable energy development. Therefore, it is of great significance to carry out research and application of heterojunction solar electric panels.